Universal Journal of Applied Science Vol. 7(1), pp. 1 - 7
DOI: 10.13189/ujas.2020.070101
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Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor


Getu Endale 1,*, Megersa Wodajo 2
1 Department of Physics, CNCS, Wolkite University, P.O.Box 07, Wolkite, Ethiopia
2 Department of Physics, CNCS, Adama Science and Technology University, P.O.Box 1888, Adama, Ethiopia

ABSTRACT

In this paper, the Photoluminescence intensity of Zinc oxide compound semiconductor in conduction band to valence band, ICV , conduction band to localized trap centre, ICT and localized trap centre to valence band, IT V radiative recombination mechanisms are discussed in different temperatures. By varying temperature, the dominated radiative recombination mechanisms are studied from the three radiative recombination mechanisms. At high values of temperature, the intensity of light in band-to-band radiative recombination mechanism dominates for all values of energies. For high values of impurity trap density, only the intensity of light in conduction band to trap level radiative recombination mechanisms dominates for all energies.

KEYWORDS
Radiative Recombination, Photolumines Bcence, Temperature, Zinc Oxide (ZnO), Localized State Energy

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Getu Endale , Megersa Wodajo , "Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor," Universal Journal of Applied Science, Vol. 7, No. 1, pp. 1 - 7, 2020. DOI: 10.13189/ujas.2020.070101.

(b). APA Format:
Getu Endale , Megersa Wodajo (2020). Effects of Temperature on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor. Universal Journal of Applied Science, 7(1), 1 - 7. DOI: 10.13189/ujas.2020.070101.