Universal Journal of Physics and Application Vol. 13(3), pp. 54 - 61
DOI: 10.13189/ujpa.2019.130302
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Time Dependence of Transient Radiative Excess Carrier Lifetimes and Carriers Density in Indium Antimonide(InSb) Semiconductor in the Presence and Absence of Illumination

Getu Endale ^*
Department of Physics, CNCS, Wolkite University, P.O.Box 007, Wolkite, Ethiopia

ABSTRACT

In this work, we models the optical generation and transient radiative recombination excess carrier lifetimes in direct band gap semiconductors Indium antimonide (Insb) during illumination and after switching off the illumination. The time dependence of excess carrier density and excess carrier lifetimes are determined by using the doping level 10¹⁷cm^-3 and absorption rate 1:21x10²⁴cm^-3s^-1. The transient mean times for each excess carrier lifetimes to reach their steady-state values and excess carrier lifetime are determined.

KEYWORDS
Excess Carrier Lifetimes, Radiative Recombination, Direct Band Gap Semiconductor, Illumination

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Getu Endale , "Time Dependence of Transient Radiative Excess Carrier Lifetimes and Carriers Density in Indium Antimonide(InSb) Semiconductor in the Presence and Absence of Illumination," Universal Journal of Physics and Application, Vol. 13, No. 3, pp. 54 - 61, 2019. DOI: 10.13189/ujpa.2019.130302.

(b). APA Format:
Getu Endale (2019). Time Dependence of Transient Radiative Excess Carrier Lifetimes and Carriers Density in Indium Antimonide(InSb) Semiconductor in the Presence and Absence of Illumination. Universal Journal of Physics and Application, 13(3), 54 - 61. DOI: 10.13189/ujpa.2019.130302.