Universal Journal of Physics and Application Vol. 7(3), pp. 290 - 294
DOI: 10.13189/ujpa.2013.010309
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A Novel Verilog-A model of Spin Torque Transfer Magnetic Tunnel Junction

Rishubh Garg , Jyoti Kedia ^*
Department of E&EC, PEC University of Technology, Chandigarh, India

ABSTRACT

A novel simple and efficient model of Spin Torque Transfer Magnetic Tunnel Junction (STT-MTJ) using Verilog-A is presented. The model accurately emulates the main properties of an STT-MTJ which includes Tunnel Magneto Resistance Ratio (TMR), its dependence on the voltage bias and the critical switching current. The novelty of the model lies in the fact that the voltage dependence of TMR has been modeled using a single equation. The model can be used for faster simulations of hybrid Magnetic CMOS circuits and in various other wide range of applications. The model was developed in Verilog-A and verified using Synopsys Hspice 2010.

KEYWORDS
Behavioural modelling, Magnetic Tunnel Junction, MTJ, Spin Torque Transfer RAM, Verilog-A

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Rishubh Garg , Jyoti Kedia , "A Novel Verilog-A model of Spin Torque Transfer Magnetic Tunnel Junction," Universal Journal of Physics and Application, Vol. 7, No. 3, pp. 290 - 294, 2013. DOI: 10.13189/ujpa.2013.010309.

(b). APA Format:
Rishubh Garg , Jyoti Kedia (2013). A Novel Verilog-A model of Spin Torque Transfer Magnetic Tunnel Junction. Universal Journal of Physics and Application, 7(3), 290 - 294. DOI: 10.13189/ujpa.2013.010309.