Universal Journal of Physics and Application Vol. 11(3), pp. 91 - 96
DOI: 10.13189/ujpa.2017.110304
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Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films

Saw Lin Oo ¹, Zayar Thu ², Than Zaw Oo ³, Pho Kaung ^4,*
1 Department of Physics, University of East Yangon, Myanmar
² Department of Physics, Maubin University, Myanmar
³ Department of Physics, Panglong University, Myanmar
⁴ University of Yangon, Myanmar

ABSTRACT

The Sb:F:SnO₂ layers (AR) were prepared by spray pyrolysis method. The anti-reflective layers (AR) heat-treated at 500℃ for 30 min (solution amount 20 cc and 25 cc) have shown an improved crystallinity with crystallite size of 38-39 nm, high optical transmission of around 70 % at 450 nm. Incorporation of anti-reflective layer at cathode interface of SiO₂/Si(N) devices increased the power conversion efficiency from 1.2% to 2.7% which is mainly contributed from photocurrent enhancement. The enhanced efficiency mainly contributed to the increase in J_sc. It is attributed to enhanced light absorption and better charge transport in the SiO₂/Si (N) device with Sb:F:SnO₂ AR layer. Results of optical and electrical studies show that the films are well suited for thin film solar cell as a window layer.

KEYWORDS
Anti-reflective Layer (AR), Antimony and Fluorine Doped Tin Oxide (Sb:F:SnO₂)

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Saw Lin Oo , Zayar Thu , Than Zaw Oo , Pho Kaung , "Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films," Universal Journal of Physics and Application, Vol. 11, No. 3, pp. 91 - 96, 2017. DOI: 10.13189/ujpa.2017.110304.

(b). APA Format:
Saw Lin Oo , Zayar Thu , Than Zaw Oo , Pho Kaung (2017). Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films. Universal Journal of Physics and Application, 11(3), 91 - 96. DOI: 10.13189/ujpa.2017.110304.