Universal Journal of Physics and Application Vol. 7(2), pp. 125 - 129
DOI: 10.13189/ujpa.2013.010212
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Preparation of Nanosized A2B6 Compound Multilayer Structures for Solar Cells


M.A. Jafarov*, E.F. Nasirov, E.A. Xanmammadova
Physical faculty, Baku State University, Baku, Azerbaijan

ABSTRACT

In this paper we report some properties of thin film photocells prepared on the basis of Al/p-CdS/p-CdTe/ZnTe/Zn1-xCdxS heterojunctions, were prepared by the method of electrochemical deposition from solution in a uniform work cycle. The open-circuit photovoltage (Uoc), short circuit-currentdensity (Isc) and efficiency of the Al/p-CdS/p-CdTe/ZnTe/Zn1-xCdxS heterojunctions were 600-650 mV; 22-25mA/cm2 and 9-12 %, accordingly. The value of Uoc increases and Isc decreases by increasing of Zn in Zn1-xCdxS material.

KEYWORDS
Thin Film, Solar Cell, Heterojunctions, Compounds, Potential Barrier

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] M.A. Jafarov , E.F. Nasirov , E.A. Xanmammadova , "Preparation of Nanosized A2B6 Compound Multilayer Structures for Solar Cells," Universal Journal of Physics and Application, Vol. 7, No. 2, pp. 125 - 129, 2013. DOI: 10.13189/ujpa.2013.010212.

(b). APA Format:
M.A. Jafarov , E.F. Nasirov , E.A. Xanmammadova (2013). Preparation of Nanosized A2B6 Compound Multilayer Structures for Solar Cells. Universal Journal of Physics and Application, 7(2), 125 - 129. DOI: 10.13189/ujpa.2013.010212.