Universal Journal of Physics and Application Vol. 10(2), pp. 40 - 42
DOI: 10.13189/ujpa.2016.100202
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O_i and C_s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications

Fayssal Boufelgha ^1,2,*, Y. Chettate ², S. Belhousse ^2
1 Welding and NDT Research Centre (CSC), Development Unit and Thin Film Applications (UDCMA), Algeria
² Research Center for Semiconductor Technology for Energy (CRTSE), Algeria

ABSTRACT

The objective of this work is determining the substitutional carbon ([C_s]) and interstitial oxygen ([O_i]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM). Some calculations of [C_s] and [O_i] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [C_s] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [O_i] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.

KEYWORDS
Crystallization, mc-Si, HEM, FTIR, [C_s], [O_i]

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Fayssal Boufelgha , Y. Chettate , S. Belhousse , "O_i and C_s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications," Universal Journal of Physics and Application, Vol. 10, No. 2, pp. 40 - 42, 2016. DOI: 10.13189/ujpa.2016.100202.

(b). APA Format:
Fayssal Boufelgha , Y. Chettate , S. Belhousse (2016). O_i and C_s Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications. Universal Journal of Physics and Application, 10(2), 40 - 42. DOI: 10.13189/ujpa.2016.100202.