Universal Journal of Physics and Application Vol. 8(4), pp. 201 - 205
DOI: 10.13189/ujpa.2014.020401
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Modification of the Electrical Properties of Porous Silicon by Adsorption of Ammonia Molecules

I. B. Olenych ^1,*, L. S. Monastyrskii ¹, O. I. Aksimentyeva ¹, L. I. Yarytska ^2
1 Ivan Franko National University of Lviv, 50 Dragomanov Str., 79005 Lviv, Ukraine
² Lviv State University of Live Safety, 35 Kleparivska Str., 79000 Lviv, Ukraine

ABSTRACT

It was studied electrophysical characteristics of porous silicon (PS) layers formed on single-crystalline silicon substrates with both n- and p-types of conductivity under conditions of adsorption of ammonia molecules. An increase in the conductivity of PS–n-Si structures was observed with increasing ammonia concentration. The adsorption of ammonia was shown to give rise to ‘diode-like’ current-voltage characteristics of PS–p-Si structures. Spectral characteristics of photovoltage and absorption bands in the infrared spectrum for our structures subjected to ammonia adsorption were studied. We suggested a possible mechanism for the influence of ammonia adsorption on the properties of the PS–silicon structures.

KEYWORDS
Porous Silicon, Ammonia Adsorption, Conductivity, Photovoltage, Infrared Spectroscopy

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] I. B. Olenych , L. S. Monastyrskii , O. I. Aksimentyeva , L. I. Yarytska , "Modification of the Electrical Properties of Porous Silicon by Adsorption of Ammonia Molecules," Universal Journal of Physics and Application, Vol. 8, No. 4, pp. 201 - 205, 2014. DOI: 10.13189/ujpa.2014.020401.

(b). APA Format:
I. B. Olenych , L. S. Monastyrskii , O. I. Aksimentyeva , L. I. Yarytska (2014). Modification of the Electrical Properties of Porous Silicon by Adsorption of Ammonia Molecules. Universal Journal of Physics and Application, 8(4), 201 - 205. DOI: 10.13189/ujpa.2014.020401.