Universal Journal of Electrical and Electronic Engineering Vol. 7(2), pp. 110 - 117
DOI: 10.13189/ujeee.2020.070206
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Nonvolatile Memory Cell Based on Memristor


Santosh Parajuli 1,*, Ram Kaji Budhathoki 1, Hyongsuk Kim 2
1 Department of Electrical and Electronics Engineering, Kathmandu University, Dhulikhel, Nepal
2 Division of Electronics and Information Engineering, Chonbuk National University, Jeonju 567-54896, South Korea

ABSTRACT

Memristor, one of the fundamental circuit elements, has promising applications in non-volatile memory and storage technology as it can theoretically achieve infinite states. Information can be stored independently in these states and retrieved whenever required. In this paper, we have proposed a non volatile memory cell based on memristor emulator. The circuit is able to perform read and write operations. In this memristor based memroy cell, unipolar pulse is used for writing and bipolar pulse is used for reading. Unlike other earlier designs, the circuit does not need external read/write enable switches to switch between read and write operations; the switching is achieved by the zero average bipolar read pulse given after the completion of write cycle. In our proposed memristor based memory cell, single bit can be read and any voltages from 0 to 5 volts can be written. Mathematical analysis and the simulation results of memristor emulator based read write circuit have been presented to confirm its operation.

KEYWORDS
Memristor, Memristor Emulator, Memristor Memory Cell, Memristor Read, Memristor Write

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Santosh Parajuli , Ram Kaji Budhathoki , Hyongsuk Kim , "Nonvolatile Memory Cell Based on Memristor," Universal Journal of Electrical and Electronic Engineering, Vol. 7, No. 2, pp. 110 - 117, 2020. DOI: 10.13189/ujeee.2020.070206.

(b). APA Format:
Santosh Parajuli , Ram Kaji Budhathoki , Hyongsuk Kim (2020). Nonvolatile Memory Cell Based on Memristor. Universal Journal of Electrical and Electronic Engineering, 7(2), 110 - 117. DOI: 10.13189/ujeee.2020.070206.