Universal Journal of Materials Science Vol. 7(3), pp. 35 - 41
DOI: 10.13189/ujms.2019.070301
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Effects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor under Low injection Level


Getu Endale *
Department of Physics, CNCS, Wolkite University, P.O.Box 007, Wolkite, Ethiopia

ABSTRACT

This paper presents the effects of the transition energies on photoluminescence intensities in Zinc Oxide compound semiconductor due to the intra-band transition of free carriers. The excitation of free carriers from the valence band to conduction band and from different localized state to the conduction band by the illumination of sufficient energy is considered. A theoretical model for minority carrier trapping is also investigated to explain the dependence of the photoluminescence on the trap energy. Variation of photoluminescence intensities along with localized state energy and transition energy is considered at different temperatures. As temperature increases the photoluminescence due to the transition of free electrons from the conduction band to the valence band, from the conduction band to the localized states and from the localized states to the valence band are increasing.

KEYWORDS
Photoluminescence, Intra-band, Photon Energy, Energy Bands

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Getu Endale , "Effects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor under Low injection Level," Universal Journal of Materials Science, Vol. 7, No. 3, pp. 35 - 41, 2019. DOI: 10.13189/ujms.2019.070301.

(b). APA Format:
Getu Endale , (2019). Effects of Transition Energy on Intra-Band Photoluminescence of Zinc Oxide (ZnO) Semiconductor under Low injection Level. Universal Journal of Materials Science, 7(3), 35 - 41. DOI: 10.13189/ujms.2019.070301.