Universal Journal of Physics and Application Vol. 11(3), pp. 91 - 96
DOI: 10.13189/ujpa.2017.110304
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Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films


Saw Lin Oo 1, Zayar Thu 2, Than Zaw Oo 3, Pho Kaung 4,*
1 Department of Physics, University of East Yangon, Myanmar
2 Department of Physics, Maubin University, Myanmar
3 Department of Physics, Panglong University, Myanmar
4 University of Yangon, Myanmar

ABSTRACT

The Sb:F:SnO2 layers (AR) were prepared by spray pyrolysis method. The anti-reflective layers (AR) heat-treated at 500℃ for 30 min (solution amount 20 cc and 25 cc) have shown an improved crystallinity with crystallite size of 38-39 nm, high optical transmission of around 70 % at 450 nm. Incorporation of anti-reflective layer at cathode interface of SiO2/Si(N) devices increased the power conversion efficiency from 1.2% to 2.7% which is mainly contributed from photocurrent enhancement. The enhanced efficiency mainly contributed to the increase in Jsc. It is attributed to enhanced light absorption and better charge transport in the SiO2/Si (N) device with Sb:F:SnO2 AR layer. Results of optical and electrical studies show that the films are well suited for thin film solar cell as a window layer.

KEYWORDS
Anti-reflective Layer (AR), Antimony and Fluorine Doped Tin Oxide (Sb:F:SnO2)

Cite this paper
Saw Lin Oo , Zayar Thu , Than Zaw Oo , Pho Kaung . "Optical and Electrical Properties of Antimony and Fluorine Doped Tin Oxide Thin Films." Universal Journal of Physics and Application 11.3 (2017) 91 - 96. doi: 10.13189/ujpa.2017.110304.