Nanoscience and Nanoengineering Vol. 4(1), pp. 22 - 30
DOI: 10.13189/nn.2016.040103
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Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates


Vitalii Borblik *, Andrey Korchevoi , Andrii Nikolenko , Viktor Strelchuk , Alexander Fonkich , Yurii Shwarts , Marina Shwarts
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

ABSTRACT

The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface and by the data of Raman light scattering. The most probable size of the nanocrystallites forming the films decreases monotonically with decreasing their thickness. And raise of the deposition temperature results in their enlargement. Electro conductivity of such films proves to be high enough (resistivity of 1-10 Ohm cm at room temperature) and has character of variable range hopping conduction of the Mott's type. The hops, presumably, take place through the localized states connected with the grain boundaries.

KEYWORDS
Thermal Vacuum Deposition, Germanium, Gallium Arsenide, Nanocrystalline Films, Hopping Conduction

Cite this paper
Vitalii Borblik , Andrey Korchevoi , Andrii Nikolenko , Viktor Strelchuk , Alexander Fonkich , Yurii Shwarts , Marina Shwarts . "Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates." Nanoscience and Nanoengineering 4.1 (2016) 22 - 30. doi: 10.13189/nn.2016.040103.