Universal Journal of Physics and Application Vol. 9(1), pp. 1 - 5
DOI: 10.13189/ujpa.2015.030101
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Electroluminescence from GaN Nanostructures


Alemayehu Keno 1, Getnet Melese 2,*, L. V Choudary 2
1 Nekemte College of Teachers’ Education, Ethiopia
2 Department of Physics, Jimma University, Ethiopia

ABSTRACT

Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.

KEYWORDS
Gallium-nitride, Nanostructures, Quantum Confinement, Recombination, Electroluminescence

Cite This Paper in IEEE or APA Citation Styles
(a). IEEE Format:
[1] Alemayehu Keno , Getnet Melese , L. V Choudary , "Electroluminescence from GaN Nanostructures," Universal Journal of Physics and Application, Vol. 9, No. 1, pp. 1 - 5, 2015. DOI: 10.13189/ujpa.2015.030101.

(b). APA Format:
Alemayehu Keno , Getnet Melese , L. V Choudary , (2015). Electroluminescence from GaN Nanostructures. Universal Journal of Physics and Application, 9(1), 1 - 5. DOI: 10.13189/ujpa.2015.030101.