Universal Journal of Physics and Application Vol. 9(1), pp. 1 - 5
DOI: 10.13189/ujpa.2015.030101
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Electroluminescence from GaN Nanostructures

Alemayehu Keno 1, Getnet Melese 2,*, L. V Choudary 2
1 Nekemte College of Teachers’ Education, Ethiopia
2 Department of Physics, Jimma University, Ethiopia


Electroluminescence (EL) intensity from GaN nanostructures is reported as a function of different parameters, such excitation wavelength, number of the nanostructures, applied voltage, temperature and time. Quantum confinement model (QCM) is used to develop the model equation that describes the EL intensity as a function of size of the nanostructures. It is shown that as the number of nanostructures decreases EL intensity increases. The highly efficient EL intensity is obtained at low operating voltage (6V). It is observed that EL intensity decreases as the temperature increases and degrades with time.

Gallium-nitride, Nanostructures, Quantum Confinement, Recombination, Electroluminescence

Cite this paper
Alemayehu Keno , Getnet Melese , L. V Choudary . "Electroluminescence from GaN Nanostructures." Universal Journal of Physics and Application 9.1 (2015) 1 - 5. doi: 10.13189/ujpa.2015.030101.